Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: MOSpipeDescription: NChannel Enhancement Mode Logic LevelExcellent Gate Charge x RDS (on) Product (FOM) N-Channel Enhancement Mode Logic LevelExcellent Gate Charge x RDS (on) Product (FOM)1587 -
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Category: IGBTtransistorDescription: IGBT The Infineon * * Infineon * * series IGBT modules provide low switching losses for switching frequencies up to 60 kHz. IGBT spans a series of power modules, such as ECONOPACK package, with open collector emitter voltage at 1200V; PrimePACK IGBT half bridge chopper module with NTC up to 1600/1700V. PrimePACK IGBT can be found in industrial, commercial, construction, and agricultural vehicles. The N-channel TRENCHSTOP TM and Fieldstop IGBT modules are suitable for both hard switching and soft switching applications, such as inverters, UPS, and industrial drives. Package types include: 62mm module, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4 # # # IGBT discrete parts and modules, Infineon insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.9927 -
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Category: Small signal diodeDescription: Rectifier Diode, 1 Phase, 1Element, 200A, 600V V(RRM), Silicon, 9 X 9MM, DIE-17987 -
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Category: Bipolar transistorDescription: Infineon ### Digital transistors, Infineon bipolar transistors equipped with resistors, also known as digital transistors or bias resistors, consist of one or two integrated resistors. A single series input resistor, or a voltage divider with two resistors, can directly drive these devices from a digital source. Provide single and dual transistor models.1805 -
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Category: MOSpipeDescription: OptiMOSTM3Optimization technology for power transistor characteristics, synchronous rectification OptiMOSTM3 Power-Transistor Features Optimized technology for synchronous rectification7026 -
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Category: IGBTtransistorDescription: IGBT - Wechselrichter / IGBTInverter H ö chstzul ä ssige Werte/maximum rated IGBT Weichselrichter/IGBT inverter H ö chstzul ä ssige Werte/maximum rated values9360 -
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Category: IGBTtransistorDescription: IHM -BModule, soft switching trench IGBT4 IHM-B module with soft switching Trench-IGBT45626 -
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Category: Schottky diodeDescription: BAT64-04 串联肖特基二极管 40V 250mA/0.25A 570mV/0.57V SOT-23/SC-59 marking/标记 64 低压降 快恢复5988 -
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Category: MOSpipeDescription: INFINEON BSC0911ND 双路场效应管, MOSFET, 双N沟道, 40 A, 25 V, 0.0009 ohm, 10 V, 1.6 V6767
